PSMN7R5-30MLDXN-Channel 30 V 57A (Tc) 45W (Tc) Surface Mount LFPAK33
1:$0.5730
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN7R-1004635
ManufacturerNexperia USA Inc.
MPN #.PSMN7R5-30MLDX
Estimated Lead Time6 Weeks
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Datasheet
PSMN7R5-30MLD(PDF)
PSMN7R5-30MLD(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5730
Ext. Price$ 0.5730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5730$0.5730
10$0.4960$4.9620
100$0.3440$34.4250
500$0.2870$143.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN7R5
Continuous Drain Current (ID) @ 25°C57A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)655 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance7.6mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 1mA
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN7R5-30MLDX is a surface-mount N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for a maximum voltage of 30 V and can handle a continuous drain current of 57A when the device is adequately cooled (Tc). The MOSFET exhibits a low on-resistance of 7.6mOhm at a drain current of 15A and a gate-source voltage of 10V, which contributes to efficient performance with minimal power loss. It operates with a maximum power dissipation of 45W when mounted on a suitable heatsink (Tc), and features a threshold voltage of 2.2V at a current of 1mA, housed in a compact LFPAK33 package for surface-mount applications.
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