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PSMN7R0-30YLC,115N-Channel 30 V 61A (Tc) 48W (Tc) Surface Mount LFPAK56, Power-SO8

1:$0.5300

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN7R-1036020
ManufacturerNexperia USA Inc.
MPN #.PSMN7R0-30YLC,115
Estimated Lead Time13 Weeks
SampleGet Free Sample
DatasheetDatasheetPSMN7R0-30YLC(PDF)
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In Stock: 2012
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.5300
Ext. Price$ 0.5300
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5300$0.5300
10$0.4630$4.6330
100$0.3200$31.9810
500$0.2680$133.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN7R0
Continuous Drain Current (ID) @ 25°C61A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1057 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance7.1mOhm @ 20A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.95V @ 1mA
Package / CaseSC-100, SOT-669
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN7R0-30YLC
PCN Assembly/Origin
Mult Dev Wafer Test Chgs 4/Feb/2022
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Packaging
All Dev Label Chgs 2/Aug/2020Label Chg 12/Mar/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN7R0-30YLC,115 is an N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for surface mount applications, housed in an LFPAK56, Power-SO8 package. The device operates with a drain-source voltage of 30 V and can handle a continuous drain current of 61A at a case temperature (Tc). It has a power dissipation rating of 48W at the same temperature. The MOSFET features a gate threshold voltage of 4.5V to 10V and achieves a forward voltage of 1.95V at 1mA. These specifications make it suitable for efficient power management tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.