PSMN7R0-100ES,127N-Channel 100 V 100A (Tc) 269W (Tc) Through Hole I2PAK
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN7R-996195
ManufacturerNexperia USA Inc.
MPN #.PSMN7R0-100ES,127
Estimated Lead Time-
SampleGet Free Sample
Datasheet
PSMN7R0-100ES(PDF)
PSMN7R0-100ES(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323
PMPB10UPX$0.3510
P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)125 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6686 pF @ 50 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation269W (Tc)
RDS(on) Drain-to-Source On Resistance6.8mOhm @ 15A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN7R0-100ES,127 is an N-channel MOSFET manufactured by Nexperia USA Inc. This component is designed to handle a maximum voltage of 100 V and a current of up to 100 A when measured at the case (Tc). It boasts a power dissipation of 269 W at Tc, making it suitable for high-power applications. The MOSFET comes in a through-hole I2PAK package, facilitating ease of mounting on circuit boards. It features a gate charge of 125 nC at 10 V, which indicates its efficient switching capabilities. The device employs metal oxide semiconductor technology, which enhances its electrical performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.