PSMN6R5-25YLC,115N-Channel 25 V 64A (Tc) 48W (Tc) Surface Mount LFPAK56, Power-SO8
1:$0.5560
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN6R-990703
ManufacturerNexperia USA Inc.
MPN #.PSMN6R5-25YLC,115
Estimated Lead Time13 Weeks
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Datasheet
PSMN6R5-25YLC(PDF)
PSMN6R5-25YLC(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5560
Ext. Price$ 0.5560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5560$0.5560
10$0.4780$4.7810
100$0.3300$33.0440
500$0.2760$138.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN6R5
Continuous Drain Current (ID) @ 25°C64A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1093 pF @ 12 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 20A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.95V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Nexperia USA Inc. PSMN6R5-25YLC,115 is a surface-mount N-Channel MOSFET designed for efficient power management applications. It operates with a voltage rating of 25V and can conduct a continuous current of up to 64A when mounted on a recommended heat sink. The component is housed in a compact LFPAK56 (Power-SO8) package, optimizing it for high-density board assembly. Featuring a gate threshold voltage of 1.95V at 1mA, the MOSFET also exhibits a total gate charge of 17.5 nC at 10V, making it suitable for fast switching operations. Its power handling capacity is rated at 48W when adequately heat-sinked, contributing to its effectiveness in various power control circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.