PSMN5R4-25YLDXN-Channel 25 V 70A (Tc) 47W (Tc) Surface Mount LFPAK56, Power-SO8
1:$0.6660
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN5R-1019656
ManufacturerNexperia USA Inc.
MPN #.PSMN5R4-25YLDX
Estimated Lead Time13 Weeks
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Datasheet
PSMN5R4-25YLD(PDF)
PSMN5R4-25YLD(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6660
Ext. Price$ 0.6660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6660$0.6660
10$0.5760$5.7590
100$0.3970$39.7380
500$0.3330$166.2810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN5R4
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)858 pF @ 12 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation47W (Tc)
RDS(on) Drain-to-Source On Resistance5.69mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN5R4-25YLDX is a surface mount N-channel MOSFET manufactured by Nexperia USA Inc. It features a maximum drain-source voltage of 25 V and can handle a continuous current of up to 70 A when mounted on a suitable heat sink (Tc). The part is housed in an LFPAK56, Power-SO8 package, which supports efficient thermal management and compact design. This MOSFET exhibits a low drain-source on-resistance of 5.69 mOhm at a gate voltage of 10 V and a drain current of 15 A, offering efficient switching performance. Additionally, it includes a Schottky diode as its body diode, enhancing its electrical characteristics. The device is capable of dissipating up to 47 W of power under specified conditions, making it a robust choice for various power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.