PSMN4R8-100PSEQN-Channel 100 V 120A (Tj) 405W (Tc) Through Hole TO-220AB
1:$4.2570
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN4R-1020890
ManufacturerNexperia USA Inc.
MPN #.PSMN4R8-100PSEQ
Estimated Lead Time-
SampleGet Free Sample
Datasheet
PSMN4R8-100PSE(PDF)
PSMN4R8-100PSE(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.2570
Ext. Price$ 4.2570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.2570$4.2570
10$3.5750$35.7530
100$2.8920$289.2130
500$2.5710$1285.6250
1000$2.2020$2201.5000
2000$2.0730$4145.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN4R8
Continuous Drain Current (ID) @ 25°C120A (Tj)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)278 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14400 pF @ 50 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation405W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN4R8-100PSEQ is a high-performance N-Channel MOSFET manufactured by Nexperia USA Inc. It features a maximum drain-source voltage of 100V and a continuous drain current of up to 120A under certain thermal conditions. The device is capable of dissipating 405W of power when mounted in a suitable thermal environment. It comes in a TO-220AB through-hole package, making it suitable for applications requiring robust mounting and efficient heat dissipation. The MOSFET has a gate threshold voltage of 4V at 1mA and a typical input capacitance of 14400 pF at a drain-source voltage of 50V, indicating good switching characteristics for high-power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.