PSMN4R5-40BS,118N-Channel 40 V 100A (Tc) 148W (Tc) Surface Mount D2PAK
1:$1.3350
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ABRmicro #.ABR2045-PSMN4R-931698
ManufacturerNexperia USA Inc.
MPN #.PSMN4R5-40BS,118
Estimated Lead Time13 Weeks
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Datasheet
PSMN4R5-40BS(PDF)
PSMN4R5-40BS(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.3350
Ext. Price$ 1.3350
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3350$1.3350
10$1.1070$11.0710
100$0.8810$88.0810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN4R5
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2683 pF @ 20 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation148W (Tc)
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN4R5-40BS,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for surface mount applications, featuring a D2PAK package. This component operates effectively with a maximum voltage of 40 V and can handle a continuous current of up to 100A at a case temperature (Tc), with a power dissipation capacity of 148W under similar conditions. The MOSFET has a gate-source threshold voltage of 10V and provides a capacitance of 2683 pF at 20 V, suitable for various electronic circuits requiring efficient power management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.