PSMN4R3-30PL,127N-Channel 30 V 100A (Tc) 103W (Tc) Through Hole TO-220AB
1:$1.5050
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN4R-1016428
ManufacturerNexperia USA Inc.
MPN #.PSMN4R3-30PL,127
Estimated Lead Time-
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Datasheet
PSMN4R3-30PL(PDF)
PSMN4R3-30PL(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5050
Ext. Price$ 1.5050
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5050$1.5050
10$1.2500$12.4950
100$0.9950$99.4500
500$0.8420$420.7500
1000$0.7140$714.0000
2000$0.6790$1357.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN4R3
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)41.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 12 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation103W (Tc)
RDS(on) Drain-to-Source On Resistance4.3mOhm @ 15A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.15V @ 1mA
Package / CaseTO-220-3
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN4R3-30PL,127 is a N-Channel MOSFET manufactured by Nexperia USA Inc. designed for high-efficiency performance with a voltage rating of 30 V and a current capacity of up to 100A when operating with an optimal case temperature (Tc). Encased in a TO-220AB package suitable for through-hole mounting, this component can handle a power dissipation of 103W under similar conditions. It features a low on-state resistance of 4.3mOhm at a current of 15A and a gate-source voltage of 10V. Additionally, its input capacitance is measured at 2400 pF at 12V, with a threshold voltage of 2.15V at 1mA, making it a robust option for various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.