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PSMN3R9-25MLC,115N-Channel 25 V 70A (Tc) 69W (Tc) Surface Mount LFPAK33

1:$0.5900

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN3R-1030351
ManufacturerNexperia USA Inc.
MPN #.PSMN3R9-25MLC,115
Estimated Lead Time6 Weeks
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In Stock: 1059
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.5900
Ext. Price$ 0.5900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5900$0.5900
10$0.5140$5.1430
100$0.3560$35.5940
500$0.2980$148.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN3R9
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1524 pF @ 12.5 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation69W (Tc)
RDS(on) Drain-to-Source On Resistance4.15mOhm @ 25A, 10V
Package Type (Mfr.)LFPAK33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.15V @ 1mA
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN3R9-25MLC,115 is a surface mount N-Channel MOSFET manufactured by Nexperia USA Inc. This component is designed to handle a drain-source voltage of up to 25 volts and can conduct a continuous current of 70 amperes when mounted on a suitable heatsink. It features a power dissipation rating of 69 watts under specified conditions, encapsulated in a compact LFPAK33 package. The MOSFET exhibits a gate charge of 21.5 nC at 10 volts, a threshold voltage of 2.15 volts at 1 milliamp, and a low on-state resistance of 4.15 milliohms at a drain current of 25 amperes and a gate-source voltage of 10 volts.
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