PSMN3R8-100BS,118N-Channel 100 V 120A (Tc) 306W (Tc) Surface Mount D2PAK
1:$3.0090
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ABRmicro #.ABR2045-PSMN3R-951915
ManufacturerNexperia USA Inc.
MPN #.PSMN3R8-100BS,118
Estimated Lead Time13 Weeks
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Datasheet
PSMN3R8-100BS(PDF)
PSMN3R8-100BS(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.0090
Ext. Price$ 3.0090
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.0090$3.0090
10$2.5260$25.2560
100$2.0430$204.3190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN3R8
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9900 pF @ 50 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation306W (Tc)
RDS(on) Drain-to-Source On Resistance3.9mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN3R8-100BS,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for high power efficiency and performance with a breakdown voltage of 100 V and a continuous drain current of 120 A at a case temperature (Tc). The device can dissipate up to 306 Watts of power also at Tc. It features a gate-source voltage rating of ±20 V and a gate charge of 170 nC when driven at 10 V, making it suitable for high-speed switching. The MOSFET is encapsulated in a surface-mount D2PAK package, facilitating integration into compact electronic systems.
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