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PSMN3R3-60PLQN-Channel 60 V 130A (Tc) 293W (Tc) Through Hole TO-220AB

1:$2.6060

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN3R-1023186
ManufacturerNexperia USA Inc.
MPN #.PSMN3R3-60PLQ
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetPSMN3R3-60PL(PDF)
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In Stock: 4195
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.6060
Ext. Price$ 2.6060
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.6060$2.6060
10$2.1900$21.8980
100$1.7720$177.2250
500$1.5750$787.3130
1000$1.3490$1349.3750
2000$1.2700$2539.3750
5000$1.2180$6088.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN3R3
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10115 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation293W (Tc)
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN3R3-60PL
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024Mult Device Part Marking Add 30/Sep/2017
PCN Obsolescence/ EOL
OBS 28/Dec/2023
PCN Packaging
All Dev Label Chgs 2/Aug/2020Label Chg 12/Mar/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN3R3-60PLQ is an N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for high power and high efficiency with a 60V drain-source voltage and a drain current of 130A when mounted on a suitable heatsink. The device is housed in a TO-220AB through-hole package, facilitating heat dissipation and ease of mounting on PCBs. With a power dissipation capability of 293W, this MOSFET exhibits a gate charge of 10115 pF at 25V and features a gate threshold voltage of 2.1V at 1mA. It also offers a gate-source voltage handling of ±20V, making it a robust choice for high-power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.