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PSMN3R2-30YLC,115N-Channel 30 V 100A (Tc) 92W (Tc) Surface Mount LFPAK56, Power-SO8

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ABRmicro #.ABR2045-PSMN3R-1003768
ManufacturerNexperia USA Inc.
MPN #.PSMN3R2-30YLC,115
Estimated Lead Time-
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DatasheetDatasheetPSMN3R2-30YLC(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2081 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation92W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 25A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.95V @ 1mA
Package / CaseSC-100, SOT-669
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN3R2-30YLC
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Obsolescence/ EOL
Multiple Devices 25/Dec/2013
PCN Packaging
All Dev Label Chgs 2/Aug/2020Label Chg 12/Mar/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN3R2-30YLC,115 is an N-Channel MOSFET manufactured by Nexperia USA Inc. It features a voltage rating of 30V and a current capacity of 100A when measured at the case (Tc). The device can dissipate up to 92W of power at Tc, making it suitable for high-power applications. It comes in a Surface Mount package, specifically in the LFPAK56 or Power-SO8 form, which supports compact circuit designs. The MOSFET has a gate charge of 29.5 nC at 10V and operates with gate-source voltages of 4.5V and 10V, reflecting its efficiency in driving applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.