The PSMN2R8-40BS,118, manufactured by Nexperia USA Inc., is a high-performance N-Channel MOSFET designed for efficient power management. It boasts a maximum drain-source voltage of 40 V and can handle a continuous current of 100A when mounted on a suitable heat sink. The device comes in a D2PAK surface-mount package, enabling streamlined integration into various circuits. With a low on-state resistance of 2.9 milliohms at 10A and 10V, it ensures lower conduction losses. Additionally, the MOSFET has a power dissipation capacity of 211W at the case temperature, and a gate charge capacitance of 4491 pF at 20 V, contributing to its robust performance in demanding environments.