PSMN2R6-40YS,115N-Channel 40 V 100A (Tc) 131W (Tc) Surface Mount LFPAK56, Power-SO8
1:$1.4690
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN2R-935584
ManufacturerNexperia USA Inc.
MPN #.PSMN2R6-40YS,115
Estimated Lead Time-
SampleGet Free Sample
Datasheet
PSMN2R6-40YS(PDF)
PSMN2R6-40YS(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 79130
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.4690
Ext. Price$ 1.4690
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4690$1.4690
10$1.2220$12.2190
100$0.9720$97.2190
500$0.8220$411.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323
PMPB10UPX$0.3510
P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberPSMN2R6
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3776 pF @ 12 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation131W (Tc)
RDS(on) Drain-to-Source On Resistance2.8mOhm @ 25A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSC-100, SOT-669
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN2R6-40YS,115, manufactured by Nexperia USA Inc., is an N-Channel MOSFET designed for efficient power management in electronic devices. It operates at a maximum drain-source voltage of 40V and can handle continuous drain currents up to 100A under specified thermal conditions. The device boasts an impressive low on-state resistance of 2.8mOhm at 25A, 10V, which contributes to reduced power losses during operation. Housed in a compact Power-SO8 (LFPAK56) surface-mount package, it is capable of dissipating up to 131W, making it suitable for high-power density applications. Additionally, the MOSFET features a total gate charge of 63 nC at 10V, indicating its efficiency in switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.