PSMN2R5-30YL,115N-Channel 30 V 100A (Tc) 88W (Tc) Surface Mount LFPAK56, Power-SO8
1:$0.9230
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ABRmicro #.ABR2045-PSMN2R-1035756
ManufacturerNexperia USA Inc.
MPN #.PSMN2R5-30YL,115
Estimated Lead Time-
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Datasheet
PSMN2R5-30YL(PDF)
PSMN2R5-30YL(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.9230
Ext. Price$ 0.9230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9230$0.9230
10$0.7540$7.5440
100$0.5870$58.6500
500$0.4970$248.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberPSMN2R5
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)57 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3468 pF @ 12 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation88W (Tc)
RDS(on) Drain-to-Source On Resistance2.4mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.15V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN2R5-30YL,115 is an N-channel MOSFET manufactured by Nexperia USA Inc. designed for efficient power management within electronic systems. It features a maximum drain-source voltage of 30 V and can handle continuous current up to 100 A at a case temperature (Tc), with a power dissipation capability of 88 W, also at the case temperature. Packaged in a compact surface-mount LFPAK56, Power-SO8 format, it offers efficient space utilization on PCBs. This MOSFET exhibits threshold voltages of 4.5 V and 10 V, with a gate charge of 57 nC at 10 V, ensuring balanced performance. Additionally, it shows a forward voltage drop of 2.15 V at 1 mA, contributing to its reliable conduction characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.