PSMN2R0-60PS,127N-Channel 60 V 120A (Tc) 338W (Tc) Through Hole TO-220AB
1:$3.5140
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ABRmicro #.ABR2045-PSMN2R-989560
ManufacturerNexperia USA Inc.
MPN #.PSMN2R0-60PS,127
Estimated Lead Time-
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Datasheet
PSMN2R0-60PS,127 Datasheet(PDF)
PSMN2R0-60PS,127 Datasheet(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.5140
Ext. Price$ 3.5140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.5140$3.5140
10$2.9510$29.5060
100$2.3870$238.7440
500$2.1220$1060.9060
1000$1.8170$1816.8750
2000$1.7110$3421.2500
5000$1.6410$8202.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPSMN2R0
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)137 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9997 pF @ 30 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation338W (Tc)
RDS(on) Drain-to-Source On Resistance2.2mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN2R0-60PS,127 is a power MOSFET manufactured by Nexperia USA Inc., designed for high efficiency and performance. This N-Channel MOSFET is capable of handling a maximum voltage of 60V and a continuous current of 120A when operating under optimal conditions. It features a low RDS(on) to minimize conduction losses and is housed in a TO-220AB package, which is a through-hole mount configuration. Additionally, the device exhibits a total gate charge of 9997 pF at 30V gate-to-source voltage and has a gate threshold voltage of 10V, making it suitable for switching applications that require fast operation and high current capacity.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.