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PSMN1R3-30YL,115N-Channel 30 V 100A (Tc) 121W (Tc) Surface Mount LFPAK56; Power-SO8

1:$1.5130

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN1R-984269
ManufacturerNexperia USA Inc.
MPN #.PSMN1R3-30YL,115
Estimated Lead Time13 Weeks
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DatasheetDatasheetPSMN1R3-30YL(PDF)
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In Stock: 8202
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5130
Ext. Price$ 1.5130
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5130$1.5130
10$1.2550$12.5480
100$0.9990$99.8750
500$0.9020$451.0310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN1R3
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6227 pF @ 12 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation121W (Tc)
RDS(on) Drain-to-Source On Resistance1.3mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK56; Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.15V @ 1mA
Package / CaseSOT-1023, 4-LFPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN1R3-30YL
PCN Assembly/Origin
Mult Dev Wafer Test Chgs 4/Feb/2022
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024Solder Material Update 14/Sep/2015
PCN Packaging
All Dev Label Chgs 2/Aug/2020Mult Devices Label 30/Sep/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN1R3-30YL,115 is an N-Channel MOSFET manufactured by Nexperia USA Inc., designed for high power efficiency in surface mount applications. This device supports up to 100A at a maximum voltage of 30V and operates effectively with a thermal power dissipation of 121W. It features a low on-state resistance of 1.3mOhm at 15A, 10V, ensuring minimal power loss during operation. Packaged in an LFPAK56, Power-SO8 configuration, the MOSFET also has a threshold voltage of 2.15V at 1mA, making it suitable for compact, high-performance design implementations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.