PSMN130-200D,118N-Channel 200 V 20A (Tc) 150W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-PSMN13-955372
ManufacturerNexperia USA Inc.
MPN #.PSMN130-200D,118
Estimated Lead Time-
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Datasheet
PSMN130-200D(PDF)
PSMN130-200D(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)65 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2470 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 25A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN130-200D,118 from Nexperia USA Inc. is an N-Channel MOSFET transistor designed for surface mounting in a DPAK package. This semiconductor device is capable of handling a maximum continuous drain current of 20A and can tolerate a drain-source voltage of up to 200 V, delivering a power dissipation of 150W under certain thermal conditions (Tc). It features a gate threshold voltage of 10V and a gate-source voltage rating of ±20V. Additionally, the transistor includes a gate charge characteristic with a capacitance of 2470 pF at 25 V, making it suitable for efficient electrical conductivity and switching purposes in various electronic designs.
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