PSMN028-100YS,115N-Channel 100 V 42A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8
1:$0.7440
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ABRmicro #.ABR2045-PSMN02-971013
ManufacturerNexperia USA Inc.
MPN #.PSMN028-100YS,115
Estimated Lead Time13 Weeks
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Datasheet
PSMN028-100YS,115 Datasheet(PDF)
PSMN028-100YS,115 Datasheet(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7440
Ext. Price$ 0.7440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7440$0.7440
10$0.6110$6.1090
100$0.4750$47.4940
500$0.4030$201.3440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN028
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1634 pF @ 50 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation89W (Tc)
RDS(on) Drain-to-Source On Resistance27.5mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN028-100YS,115 is an N-channel MOSFET manufactured by Nexperia USA Inc., designed for efficient power management and high-performance operation. It features a maximum drain-source voltage of 100 V and can handle a continuous drain current of 42 A at a case temperature (Tc). With a power dissipation capacity of up to 89 W, this MOSFET is housed in a compact LFPAK56, Power-SO8 surface mount package. It offers a gate-source voltage rating of ±20 V and a total gate charge of 1634 pF when measured at 50 V, enabling effective switching capabilities.
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