PMZ390UNEYLN-Channel 30 V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount SOT-883
1:$0.2830
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PMZ390-1012181
ManufacturerNexperia USA Inc.
MPN #.PMZ390UNEYL
Estimated Lead Time8 Weeks
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Datasheet
PMZ390UNE(PDF)
PMZ390UNE(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2830
Ext. Price$ 0.2830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2830$0.2830
10$0.1980$1.9760
100$0.1000$9.9880
500$0.0880$44.0940
1000$0.0690$69.0630
2000$0.0620$123.2500
5000$0.0610$302.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMZ390
Continuous Drain Current (ID) @ 25°C900mA (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)1.3 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)41 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation350mW (Ta), 5.43W (Tc)
RDS(on) Drain-to-Source On Resistance470mOhm @ 900mA, 4.5V
Package Type (Mfr.)SOT-883
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)950mV @ 250µA
Package / CaseSC-101, SOT-883
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMZ390UNEYL is a surface mount N-Channel MOSFET manufactured by Nexperia USA Inc. It operates with a maximum voltage of 30 V and can handle a continuous current of up to 900 mA when measured at an ambient temperature (Ta), with a total power dissipation capacity of 350 mW at Ta and 5.43 W at case temperature (Tc). The device is encapsulated in a compact SOT-883 package. It features a gate charge of 1.3 nC for a gate-source voltage of 4.5 V and operates efficiently with gate-source thresholds of 1.5V and 4.5V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.