PMXB65UPEZP-Channel 12 V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
1:$0.2740
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PMXB65-1000871
ManufacturerNexperia USA Inc.
MPN #.PMXB65UPEZ
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMXB65UPE(PDF)
PMXB65UPE(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2740
Ext. Price$ 0.2740
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2740$0.2740
10$0.1910$1.9130
100$0.0970$9.6690
500$0.0790$39.3130
1000$0.0580$58.4380
2000$0.0490$97.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMXB65
Continuous Drain Current (ID) @ 25°C3.2A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)634 pF @ 6 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation317mW (Ta), 8.33W (Tc)
RDS(on) Drain-to-Source On Resistance72mOhm @ 3.2A, 4.5V
Package Type (Mfr.)DFN1010D-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case3-XDFN Exposed Pad
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMXB65UPEZ from Nexperia USA Inc. is a P-Channel MOSFET designed for efficient power management in compact electronic applications. This surface-mount component comes in a DFN1010D-3 package, offering a small footprint suitable for space-constrained environments. It operates with a drain-source voltage of 12V and can handle a continuous drain current of 3.2A when the temperature is ambient (Ta), with a power dissipation capability of 317mW at Ta and up to 8.33W at the case temperature (Tc). The MOSFET exhibits an on-resistance of 72 milliohms when conducting 3.2A at a gate-source voltage of 4.5V, and it features a threshold voltage of 1V at a gate current of 250µA.
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