PMXB65ENEZN-Channel 30 V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
1:$0.3840
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PMXB65-963166
ManufacturerNexperia USA Inc.
MPN #.PMXB65ENEZ
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMXB65ENE(PDF)
PMXB65ENE(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 8841
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3840
Ext. Price$ 0.3840
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3840$0.3840
10$0.2980$2.9750
100$0.1790$17.8500
500$0.1660$82.8750
1000$0.1130$112.6250
2000$0.1030$206.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323
PMPB10UPX$0.3510
P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMXB65
Continuous Drain Current (ID) @ 25°C3.2A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)295 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation400mW (Ta), 8.33W (Tc)
RDS(on) Drain-to-Source On Resistance67mOhm @ 3.2A, 10V
Package Type (Mfr.)DFN1010D-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case3-XDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMXB65ENEZ is an N-Channel MOSFET manufactured by Nexperia USA Inc., designed for surface mount applications with a DFN1010D-3 package. It operates efficiently within a voltage range of up to 30V and supports a continuous current of 3.2A under ambient conditions, with a power dissipation capacity of 400mW or up to 8.33W when mounted on a suitable heatsink. Exhibiting a low on-state resistance of 67 milliohms at 3.2A and 10V, it can handle gate-source voltages of ±20V. The threshold voltage is specified at 2.5V with a drain current of 250µA. This component is well-suited for high-density applications due to its compact size and efficient thermal management characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.