PMV75UP,215P-Channel 20 V 2.5A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
1:$0.3750
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ABRmicro #.ABR2045-PMV75U-1048311
ManufacturerNexperia USA Inc.
MPN #.PMV75UP,215
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMV75UP(PDF)
PMV75UP(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.3750
Ext. Price$ 0.3750
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3750$0.3750
10$0.2600$2.6030
100$0.1320$13.1750
500$0.1070$53.6560
1000$0.0800$79.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMV75
Continuous Drain Current (ID) @ 25°C2.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)550 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation490mW (Ta), 5W (Tc)
RDS(on) Drain-to-Source On Resistance102mOhm @ 2.5A, 4.5V
Package Type (Mfr.)TO-236AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMV75UP,215 is a P-Channel MOSFET manufactured by Nexperia USA Inc., designed for efficient switching purposes. It features a drain-source voltage rating of 20V and can handle a continuous drain current of 2.5A at thermal conditions. The MOSFET offers a low on-state resistance of 102mOhm at 2.5A and 4.5V gate-source voltage, ensuring minimal power loss in operation. It is capable of dissipating up to 490mW in free air (Ta) and up to 5W when mounted on a suitable heat sink (Tc). The device is encapsulated in a surface-mount TO-236AB package, compatible with automated soldering processes, and supports gate drive voltages of 1.8V and 4.5V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.