PMV48XPARP-Channel 20 V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
1:$0.4360
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ABRmicro #.ABR2045-PMV48X-1006818
ManufacturerNexperia USA Inc.
MPN #.PMV48XPAR
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMV48XPA(PDF)
PMV48XPA(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4360
Ext. Price$ 0.4360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4360$0.4360
10$0.3710$3.7080
100$0.2580$25.8190
500$0.2020$100.9380
1000$0.1640$163.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMV48
Continuous Drain Current (ID) @ 25°C3.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 4.5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1000 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation510mW (Ta), 4.15W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance55mOhm @ 2.4A, 4.5V
Package Type (Mfr.)TO-236AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.25V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMV48XPAR manufactured by Nexperia USA Inc. is a P-Channel MOSFET designed for surface mount applications, housed in a TO-236AB package. It is rated for 20V and can handle current up to 3.5A with a power dissipation of 510mW when used with the ambient temperature (Ta) and 4.15W when interfaced with a temperature-controlled environment (Tc). This component operates with a gate threshold voltage of 1.25V at a test current of 250µA, and it features a total gate charge of 11 nanocoulombs when driven with 4.5 volts. Its compact and efficient design is suitable for high-density electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.