PMV450ENEARN-Channel 60 V 800mA (Ta) 323mW (Ta), 554mW (Tc) Surface Mount TO-236AB
1:$0.2830
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ABRmicro #.ABR2045-PMV450-1003605
ManufacturerNexperia USA Inc.
MPN #.PMV450ENEAR
Estimated Lead Time6 Weeks
SampleGet Free Sample
Datasheet
PMV450ENEA(PDF)
PMV450ENEA(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.2830
Ext. Price$ 0.2830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2830$0.2830
10$0.1970$1.9660
100$0.0960$9.5630
500$0.0800$39.8440
1000$0.0550$55.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMV450
Continuous Drain Current (ID) @ 25°C800mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)3.6 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)101 pF @ 30 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation323mW (Ta), 554mW (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance380mOhm @ 900mA, 10V
Package Type (Mfr.)TO-236AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The PMV450ENEAR is a surface mount N-Channel MOSFET manufactured by Nexperia USA Inc., designed to handle a maximum voltage of 60V and a continuous current of 800mA when operating under optimal thermal conditions (Ta). This compact device has a power dissipation capacity of 323mW (Ta) and 554mW (Tc) and is housed in a TO-236AB package, which offers reliable thermal performance in compact designs. It features a gate charge of 3.6 nC at 10 V and a gate-source threshold voltage compatibility of 4.5V and 10V, with an input capacitance of 101 pF at 30 V. These specifications make it suitable for switching and amplification tasks in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.