PMV27UPERP-Channel 20 V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
1:$0.3590
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ABRmicro #.ABR2045-PMV27U-995896
ManufacturerNexperia USA Inc.
MPN #.PMV27UPER
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMV27UPE(PDF)
PMV27UPE(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3590
Ext. Price$ 0.3590
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3590$0.3590
10$0.3030$3.0280
100$0.2110$21.1440
500$0.1650$82.3440
1000$0.1340$133.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMV27
Continuous Drain Current (ID) @ 25°C4.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)22.1 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1820 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation490mW (Ta), 4.15W (Tc)
RDS(on) Drain-to-Source On Resistance32mOhm @ 4.5A, 4.5V
Package Type (Mfr.)TO-236AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)950mV @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMV27UPER is a P-Channel MOSFET manufactured by Nexperia USA Inc., designed for surface mount applications with a TO-236AB package. This component supports a maximum voltage of 20V and can handle a continuous current of up to 4.5A when used at ambient temperature (Ta), with a power dissipation rating of 490mW under similar conditions. When the device is mounted on a heat sink (Tc), it can dissipate up to 4.15W of power. Key electrical characteristics include an input capacitance of 1820 pF at 10V and a gate charge of 22.1 nC at 4.5V, with a gate-source voltage tolerance of ±8V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.