PMV25ENEARN-Channel 30 V 5.5A (Ta) 460mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
1:$0.4190
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PMV25E-1037906
ManufacturerNexperia USA Inc.
MPN #.PMV25ENEAR
Estimated Lead Time-
SampleGet Free Sample
Datasheet
PMV25ENEA(PDF)
PMV25ENEA(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 691
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.4190
Ext. Price$ 0.4190
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4190$0.4190
10$0.3230$3.2300
100$0.1940$19.4440
500$0.1800$89.7810
1000$0.1220$122.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323
PMPB10UPX$0.3510
P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberPMV25
Continuous Drain Current (ID) @ 25°C5.5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)597 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation460mW (Ta), 6.94W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance24mOhm @ 5.5A, 10V
Package Type (Mfr.)TO-236AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMV25ENEAR is an N-Channel MOSFET manufactured by Nexperia USA Inc., designed for surface mount applications with a TO-236AB package. It supports a maximum voltage of 30 V and can handle currents up to 5.5A when mounted on a circuit board with adequate thermal consideration. The power dissipation is rated at 460mW when considering the thermal limitations of the package and can reach up to 6.94W under case conditions (Tc). It offers a gate threshold voltage of 2.5V at 250µA and has an input capacitance of 597 pF at 15 V, making it suitable for low-voltage applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.