PMPB20XNEAXN-Channel 20 V 7.5A (Ta) 460mW (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
1:$0.4100
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ABRmicro #.ABR2045-PMPB20-956056
ManufacturerNexperia USA Inc.
MPN #.PMPB20XNEAX
Estimated Lead Time8 Weeks
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Datasheet
PMPB20XNEA(PDF)
PMPB20XNEA(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4100
Ext. Price$ 0.4100
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4100$0.4100
10$0.3160$3.1560
100$0.1890$18.9130
500$0.1750$87.6560
1000$0.1200$120.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMPB20
Continuous Drain Current (ID) @ 25°C7.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)930 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation460mW (Ta), 12.5W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance20mOhm @ 7.5A, 4.5V
Package Type (Mfr.)DFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.25V @ 250µA
Package / Case6-UDFN Exposed Pad
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMPB20XNEAX is an N-Channel MOSFET manufactured by Nexperia USA Inc., designed for surface mount applications. It features a compact DFN2020MD-6 package suited for efficient space usage on circuit boards. The MOSFET is capable of handling a drain current of 7.5A (at Ta) with a maximum power dissipation of 460mW (at Ta) and 12.5W (at Tc). It exhibits a low on-resistance of 20mOhm when operating at 7.5A and 4.5V, and it supports gate-source voltage levels of 2.5V and 4.5V, with a total gate charge of 15 nC at 4.5V, making it a suitable choice for switch applications requiring fast operation and low power losses.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.