PMPB20EN,115N-Channel 30 V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
1:$0.3240
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ABRmicro #.ABR2045-PMPB20-995032
ManufacturerNexperia USA Inc.
MPN #.PMPB20EN,115
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMPB20EN(PDF)
PMPB20EN(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3240
Ext. Price$ 0.3240
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3240$0.3240
10$0.2530$2.5290
100$0.1520$15.1940
500$0.1400$70.1250
1000$0.0960$95.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMPB20
Continuous Drain Current (ID) @ 25°C7.2A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)435 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.7W (Ta), 12.5W (Tc)
RDS(on) Drain-to-Source On Resistance19.5mOhm @ 7A, 10V
Package Type (Mfr.)DFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case6-UDFN Exposed Pad
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMPB20EN,115 is an N-channel MOSFET manufactured by Nexperia USA Inc., designed for surface-mount applications. It features a compact DFN2020MD-6 package and can handle a maximum drain-source voltage of 30V. With a drain current capability of 7.2A when measured at ambient temperature (Ta) and power dissipation ratings of 1.7W at Ta and 12.5W at case temperature (Tc), it is suitable for various power switching tasks. The MOSFET demonstrates an on-resistance of 19.5 milliohms at a gate-source voltage of 10V and a drain current of 7A. Additionally, it has a gate-source voltage tolerance of ±20V and a threshold voltage of 2V at a gate-source current of 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.