PMPB12UNEXN-Channel 20 V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6
1:$0.4270
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PMPB12-1019021
ManufacturerNexperia USA Inc.
MPN #.PMPB12UNEX
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMPB12UNE(PDF)
PMPB12UNE(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4270
Ext. Price$ 0.4270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4270$0.4270
10$0.3290$3.2940
100$0.1970$19.6560
500$0.1820$90.8440
1000$0.1240$124.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMPB12
Continuous Drain Current (ID) @ 25°C11.4A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1220 pF @ 10 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation470mW (Ta)
RDS(on) Drain-to-Source On Resistance16mOhm @ 7.9A, 4.5V
Package Type (Mfr.)DFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / Case6-UDFN Exposed Pad
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The PMPB12UNEX is a surface mount N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed to handle a continuous drain current of 11.4A and a power dissipation of 470mW, both measured at ambient temperatures with a 20V maximum drain-source voltage. Packaged in a compact DFN2020MD-6, its on-resistance is 16mOhm when carrying 7.9A with a gate-source voltage of 4.5V, and it features a gate threshold voltage of 900mV at 250µA. The component is optimized for efficiency and space conservation in electronic circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.