PMN55ENEHN-Channel 60 V 4.5A (Ta) 560mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP
1:$0.4190
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PMN55E-1012562
ManufacturerNexperia USA Inc.
MPN #.PMN55ENEH
Estimated Lead Time-
SampleGet Free Sample
Datasheet
PMN55ENE(PDF)
PMN55ENE(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 2100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4190
Ext. Price$ 0.4190
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4190$0.4190
10$0.3260$3.2620
100$0.1970$19.6560
500$0.1820$90.8440
1000$0.1230$123.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323
PMPB10UPX$0.3510
P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberPMN55
Continuous Drain Current (ID) @ 25°C4.5A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)646 pF @ 30 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation560mW (Ta), 6.25W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 3.4A, 10V
Package Type (Mfr.)6-TSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 250µA
Package / CaseSC-74, SOT-457
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The PMN55ENEH is an N-Channel MOSFET manufactured by Nexperia USA Inc. It operates at a voltage of 60 V and can handle a continuous current of 4.5A when mounted on a surface (Ta), with a power dissipation of 560mW under the same conditions, and up to 6.25W when the case temperature (Tc) is controlled. Housed in a compact 6-pin TSOP package, this MOSFET exhibits a capacitance of 646 pF at 30 V, a gate threshold voltage of 2.7V at a drain current of 250µA, and an on-state resistance of 60mOhm at a drain current of 3.4A with a 10V gate-source voltage.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.