PMN20ENAXN-Channel 40 V 6.2A (Ta) 652mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
1:$0.3930
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ABRmicro #.ABR2045-PMN20E-1038659
ManufacturerNexperia USA Inc.
MPN #.PMN20ENAX
Estimated Lead Time8 Weeks
SampleGet Free Sample
Datasheet
PMN20ENA(PDF)
PMN20ENA(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.3930
Ext. Price$ 0.3930
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3930$0.3930
10$0.3380$3.3790
100$0.2350$23.4810
500$0.1840$91.9060
1000$0.1500$149.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPMN20
Continuous Drain Current (ID) @ 25°C6.2A (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)582 pF @ 20 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation652mW (Ta), 7.5W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance23mOhm @ 6.2A, 10V
Package Type (Mfr.)6-TSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 250µA
Package / CaseSC-74, SOT-457
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PMN20ENAX is an N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for surface mount applications in a 6-TSOP package. This MOSFET operates at a maximum drain-source voltage of 40 V and can handle a continuous current of 6.2A at a maximum power dissipation of 652mW when in a Ta environment. Additionally, it can dissipate up to 7.5W when operating in a Tc environment. The device features a ±20V gate-source voltage rating, ensuring robust performance in various conditions. It is particularly tailored for automotive applications, supporting the demanding requirements of this sector with its reliable construction and design attributes.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.