PHP29N08T,127N-Channel 75 V 27A (Tc) 88W (Tc) Through Hole TO-220AB
1:$1.3940
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PHP29N-993900
ManufacturerNexperia USA Inc.
MPN #.PHP29N08T,127
Estimated Lead Time-
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Datasheet
PHP29N08T,127 Datasheet(PDF)
PHP29N08T,127 Datasheet(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3940
Ext. Price$ 1.3940
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3940$1.3940
10$1.1420$11.4220
100$0.8880$88.8250
500$0.7540$377.1880
1000$0.6130$613.0630
2000$0.5780$1156.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPHP29N08
Continuous Drain Current (ID) @ 25°C27A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))11V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)810 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation88W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 14A, 11V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 2mA
Package / CaseTO-220-3
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHP29N08T,127 is an N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for use in power applications, featuring a maximum drain-source voltage of 75V and a continuous drain current of 27A when the case temperature is maintained. Housed in a TO-220AB through-hole package, it offers a power dissipation of 88W under optimal conditions. Key electrical characteristics include a gate-source voltage rating of ±30V and a gate threshold voltage of 5V at 2mA. This MOSFET leverages metal-oxide semiconductor technology for efficient switching performance.
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