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PHP27NQ11T,127N-Channel 110 V 27.6A (Tc) 107W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-PHP27N-1039230
ManufacturerNexperia USA Inc.
MPN #.PHP27NQ11T,127
Estimated Lead Time-
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DatasheetDatasheetPHP27NQ11T,127 Datasheet(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberPHP27NQ11
Continuous Drain Current (ID) @ 25°C27.6A (Tc)
Drain-to-Source Voltage (VDS)110 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1240 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation107W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 14A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PHP27NQ11T,127 Datasheet
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Obsolescence/ EOL
Mult Dev EOL 28/Dec/2021
PCN Packaging
All Dev Label Chgs 2/Aug/2020Label Chg 12/Mar/2017
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHP27NQ11T is an N-channel MOSFET manufactured by Nexperia USA Inc., featuring a maximum drain-source voltage of 110 V and a continuous drain current of 27.6A when operated with proper case temperature (Tc). The device offers a power dissipation capability of 107W under similar conditions. Encased in a standard TO-220AB through-hole package, it provides a convenient form factor for heat dissipation and mounting. The MOSFET exhibits an input capacitance of 1240 pF at 25 V, with gate threshold voltages at 4V when a current of 1mA is applied, and operates at 10V gate voltage for effective performance.
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