PHD97NQ03LT,118N-Channel 25 V 75A (Tc) 107W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-PHD97N-935561
ManufacturerNexperia USA Inc.
MPN #.PHD97NQ03LT,118
Estimated Lead Time-
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Datasheet
PHD97NQ03LT(PDF)
PHD97NQ03LT(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHD97NQ03
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11.7 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1570 pF @ 12 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation107W (Tc)
RDS(on) Drain-to-Source On Resistance6.3mOhm @ 25A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.15V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHD97NQ03LT,118 is an N-Channel MOSFET produced by Nexperia USA Inc. It is designed for surface-mount applications and is packaged in a DPAK form factor. The MOSFET can handle a maximum drain-source voltage of 25 volts and continuous current of up to 75 amps, with a power dissipation rating of 107 watts at the transistor case. It features a gate-to-source voltage rating of ±20 volts, a gate charge of 11.7 nanocoulombs at 4.5 volts, and an on-state resistance of 6.3 milliohms at 25 amps with a gate voltage of 10 volts.
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