PHB18NQ10T,118N-Channel 100 V 18A (Tc) 79W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-PHB18N-939981
ManufacturerNexperia USA Inc.
MPN #.PHB18NQ10T,118
Estimated Lead Time-
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Datasheet
PHB18NQ10T(PDF)
PHB18NQ10T(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberPHB18NQ10
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)633 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
RDS(on) Drain-to-Source On Resistance90mOhm @ 9A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PHB18NQ10T,118 is an N-Channel MOSFET produced by Nexperia USA Inc., designed for high-efficiency power management applications. It features a maximum drain-source voltage (Vds) of 100 V and supports a continuous drain current of 18A, when mounted to a temperature-controlled surface. This MOSFET can dissipate up to 79W of power in suitable conditions, thanks to its low on-state resistance of 90 mOhm when at 9A and 10V. It comes in a D2PAK surface mount package, which facilitates efficient thermal management and compact design. The device also has a gate-source voltage threshold of ±20V and requires a gate-source voltage of 4V to achieve an on-state at 1mA.
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