NX2301P,215P-Channel 20 V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB
1:$0.3510
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ABRmicro #.ABR2045-NX2301-940299
ManufacturerNexperia USA Inc.
MPN #.NX2301P,215
Estimated Lead Time-
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Datasheet
Nx2301P215 Datasheet(PDF)
Nx2301P215 Datasheet(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.3510
Ext. Price$ 0.3510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3510$0.3510
10$0.2470$2.4650
100$0.1240$12.4310
500$0.1010$50.4690
1000$0.0750$75.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberNX2301
Continuous Drain Current (ID) @ 25°C2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 4.5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)380 pF @ 6 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation400mW (Ta), 2.8W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance120mOhm @ 1A, 4.5V
Package Type (Mfr.)TO-236AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NX2301P,215 is a P-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for surface mount applications and comes in a TO-236AB package. This transistor is capable of handling 20 V and up to 2A of continuous drain current at a power dissipation of 400 mW when mounted on a thermal ambient (Ta), and 2.8W on a thermal conductive surface (Tc). The device operates with gate voltages of 2.5V or 4.5V and features a gate charge of 6 nC at 4.5 V. Additionally, it exhibits a gate threshold voltage of 1.1V at a drain current of 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.