BUK9Y3R0-40E,115N-Channel 40 V 100A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8
1:$1.2910
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ABRmicro #.ABR2045-BUK9Y3-941463
ManufacturerNexperia USA Inc.
MPN #.BUK9Y3R0-40E,115
Estimated Lead Time13 Weeks
SampleGet Free Sample
Datasheet
BUK9Y3R0-40E(PDF)
BUK9Y3R0-40E(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2910
Ext. Price$ 1.2910
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2910$1.2910
10$1.0730$10.7310
100$0.8540$85.4250
500$0.7230$361.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK9Y3
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35.5 nC @ 5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5962 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation194W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 25A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9Y3R0-40E,115 is a surface mount N-Channel MOSFET manufactured by Nexperia USA Inc, designed for efficient power handling in compact spaces. It operates with a maximum drain-source voltage of 40 volts and can handle a continuous drain current of up to 100 amps when mounted on a suitable thermal substrate. This MOSFET can dissipate 194 watts of power under optimal conditions. Encased in an LFPAK56 package, also referred to as Power-SO8, it features a gate-source voltage tolerance of ±10 volts and is optimized for a gate threshold voltage of 5 volts, making it well-suited for high-current switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.