BUK9M6R6-30EXN-Channel 30 V 70A (Tc) 75W (Tc) Surface Mount LFPAK33
1:$0.7520
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK9M6-987419
ManufacturerNexperia USA Inc.
MPN #.BUK9M6R6-30EX
Estimated Lead Time13 Weeks
SampleGet Free Sample
Datasheet
BUK9M6R6-30E(PDF)
BUK9M6R6-30E(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7520
Ext. Price$ 0.7520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7520$0.7520
10$0.6530$6.5340
100$0.4530$45.2630
500$0.3780$189.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK9M6
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2001 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 20A, 10V
Package Type (Mfr.)LFPAK33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9M6R6-30EX is an N-Channel MOSFET manufactured by Nexperia USA Inc. designed for surface mount applications with a LFPAK33 package. It operates with a maximum drain-source voltage of 30V and can handle a continuous drain current of 70A at the case temperature (Tc) with a power dissipation of 75W at Tc. The MOSFET features a low on-resistance of 5.3 milliohms at a drain current of 20A and a gate-source voltage of 10V. It also has a gate threshold voltage of 2.1V at a gate current of 1mA, making it efficient for switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.