BUK964R2-80E,118N-Channel 80 V 120A (Tc) 349W (Tc) Surface Mount D2PAK
1:$2.1800
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK964-996435
ManufacturerNexperia USA Inc.
MPN #.BUK964R2-80E,118
Estimated Lead Time13 Weeks
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Datasheet
BUK964R2-80E(PDF)
BUK964R2-80E(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.1800
Ext. Price$ 2.1800
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1800$2.1800
10$1.8320$18.3180
100$1.4820$148.2190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK964
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)123 nC @ 5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)17130 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation349W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK964R2-80E,118, manufactured by Nexperia USA Inc., is a high-performance N-channel MOSFET designed for surface mount applications in a D2PAK package. It supports a maximum voltage of 80 V and a continuous drain current of 120A under specified conditions (Tc). The device can efficiently handle a power dissipation up to 349W (Tc). It features a gate charge of 123 nC at 5 V, a gate threshold voltage of 2.1V at 1mA, and can operate with a gate-source voltage of up to ±10V, providing reliable switching performance in demanding environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.