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BUK963R2-40B,118N-Channel 40 V 100A (Tc) 300W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-BUK963-947956
ManufacturerNexperia USA Inc.
MPN #.BUK963R2-40B,118
Estimated Lead Time-
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DatasheetBUK963R2-40B(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)93.4 nC @ 5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10502 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.8mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK963R2-40B,118, manufactured by Nexperia USA Inc., is an N-Channel MOSFET designed for high-power applications. It features a maximum drain-source voltage of 40V and can handle currents up to 100A when mounted on a suitable heatsink, delivering an impressive power dissipation of 300W. This surface-mount component is packaged in a D2PAK, providing ease of integration into circuit designs. It operates with threshold voltages of 5V and 10V, with a gate-source voltage drop of 2V at a current of 1mA, ensuring efficient switching performance for various electronic applications.
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