BUK9635-55A,118N-Channel 55 V 34A (Tc) 85W (Tc) Surface Mount D2PAK
1:$1.0520
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ABRmicro #.ABR2045-BUK963-1008686
ManufacturerNexperia USA Inc.
MPN #.BUK9635-55A,118
Estimated Lead Time13 Weeks
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Datasheet
BUK9635-55A(PDF)
BUK9635-55A(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.0520
Ext. Price$ 1.0520
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0520$1.0520
10$0.8590$8.5850
100$0.6670$66.7250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK9635
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1173 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation85W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance32mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9635-55A,118 is a high-performance N-Channel MOSFET manufactured by Nexperia USA Inc. This component is designed for efficient power management, capable of handling a voltage of 55 V and a continuous current of 34A when mounted on a suitable surface. It can dissipate up to 85W of power under specified conditions. The MOSFET is housed in a D2PAK surface-mount package, making it suitable for compact circuit designs. It features a capacitance of 1173 pF at 25 V and requires a gate threshold voltage of 2V at 1mA, reflecting its suitability for various switching applications.
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