BUK962R5-60E,118N-Channel 60 V 120A (Tc) 357W (Tc) Surface Mount D2PAK
1:$3.0690
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK962-952374
ManufacturerNexperia USA Inc.
MPN #.BUK962R5-60E,118
Estimated Lead Time13 Weeks
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Datasheet
BUK962R5-60E(PDF)
BUK962R5-60E(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.0690
Ext. Price$ 3.0690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.0690$3.0690
10$2.5770$25.7660
100$2.0860$208.5690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK962
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)17450 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation357W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 25A, 5V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK962R5-60E,118 is a N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for surface mount configuration using the D2PAK package. This component supports a maximum drain-source voltage of 60 volts with a continuous drain current of 120A under specified conditions. It is capable of handling a maximum power dissipation of 357 watts. The MOSFET allows for a gate-source voltage of 5 volts and can tolerate up to ±10 volts, making it a reliable choice for high-power applications requiring efficient voltage regulation and current switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.