BUK9620-100B,118N-Channel 100 V 63A (Tc) 203W (Tc) Surface Mount D2PAK
1:$1.8380
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ABRmicro #.ABR2045-BUK962-995584
ManufacturerNexperia USA Inc.
MPN #.BUK9620-100B,118
Estimated Lead Time13 Weeks
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Datasheet
BUK9620-100B(PDF)
BUK9620-100B(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.8380
Ext. Price$ 1.8380
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8380$1.8380
10$1.5280$15.2790
100$1.2160$121.5500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK9620
Continuous Drain Current (ID) @ 25°C63A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53.4 nC @ 5 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5657 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation203W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance18.5mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9620-100B,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc., designed for efficient power handling. It features a 100 V drain-source voltage and is capable of supporting a continuous current of up to 63A when properly mounted, with a power dissipation of 203W under specified conditions. Packaged in a D2PAK surface mount configuration, this MOSFET is suitable for high-density mounting. It also has an input capacitance of 5657 pF at 25 V, indicating its ability to handle significant electric charge in its gate region, making it effective in managing electronic switching processes. Additionally, the automotive qualification ensures its reliability in demanding environments.
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