BUK954R2-55B,127N-Channel 55 V 75A (Tc) 300W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-BUK954-931168
ManufacturerNexperia USA Inc.
MPN #.BUK954R2-55B,127
Estimated Lead Time-
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Datasheet
BUK954R2-55B(PDF)
BUK954R2-55B(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)95 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10220 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK954R2-55B is an N-channel MOSFET manufactured by Nexperia USA Inc., designed for high-power applications. It functions efficiently with a maximum voltage capacity of 55V and a continuous current rating of 75A when mounted on a suitable heat sink (Tc). This component can dissipate up to 300W under the same conditions. Encased in a TO-220AB package for through-hole mounting, the MOSFET exhibits a low on-resistance of 3.7mOhm when operating at 25A and with a gate-source voltage of 10V. Additionally, it has an input capacitance of 10,220 pF at 25 V. The gate-source voltage can tolerate fluctuations up to ±15V, making it durable for various circuit demands.
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