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BUK9510-100B,127N-Channel 100 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-BUK951-1019791
ManufacturerNexperia USA Inc.
MPN #.BUK9510-100B,127
Estimated Lead Time-
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In Stock: 5
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)86 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11045 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance9.7mOhm @ 25A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK9510-100B,127 from Nexperia USA Inc. is an N-Channel MOSFET designed for high-performance applications, offering 100V voltage handling and a current capacity of 75A at the case (Tc). With a power dissipation of 300W at Tc, this component is packaged in a robust TO-220AB through-hole form factor, making it suitable for efficient thermal management. It exhibits a gate charge of 86 nC at 5V, possesses an input capacitance of 11045 pF at 25V, and provides low on-resistance of 9.7mOhm at 25A and 10V, ensuring minimal energy loss and efficient operation.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.