BUK7Y65-100EXN-Channel 100 V 19A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8
1:$0.6500
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK7Y6-1008803
ManufacturerNexperia USA Inc.
MPN #.BUK7Y65-100EX
Estimated Lead Time13 Weeks
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Datasheet
BUK7Y65-100Ex Datasheet(PDF)
BUK7Y65-100Ex Datasheet(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6500
Ext. Price$ 0.6500
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6500$0.6500
10$0.5650$5.6530
100$0.3910$39.1000
500$0.3270$163.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK7Y65
Continuous Drain Current (ID) @ 25°C19A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17.8 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1023 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation64W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance65mOhm @ 5A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7Y65-100EX, manufactured by Nexperia USA Inc., is an N-Channel MOSFET designed for efficient power management. It operates with a voltage rating of 100 V and a current capacity of 19A at the case temperature, delivering a power dissipation of 64W. This surface-mount component comes in an LFPAK56, Power-SO8 package which is suitable for compact designs. Additionally, it features a gate charge of 1023 pF at 25 V and is controlled with a gate-source voltage of 10V. This MOSFET is tailored for automotive applications, ensuring robust performance in demanding environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.