BUK7Y113-100EXN-Channel 100 V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
1:$0.5390
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK7Y1-1033148
ManufacturerNexperia USA Inc.
MPN #.BUK7Y113-100EX
Estimated Lead Time6 Weeks
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Datasheet
BUK7Y113-100Ex Datasheet(PDF)
BUK7Y113-100Ex Datasheet(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.5390
Ext. Price$ 0.5390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5390$0.5390
10$0.4700$4.6960
100$0.3250$32.5130
500$0.2710$135.4690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK7Y113
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10.4 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)601 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation45W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance113mOhm @ 5A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseSC-100, SOT-669
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7Y113-100EX is an N-channel MOSFET manufactured by Nexperia USA Inc., designed for efficient power management. This component is capable of handling a maximum voltage of 100 V and a continuous current of 12A when properly mounted, with a power dissipation capacity of 45W, making it suitable for a variety of power switching tasks. It features a surface mount LFPAK56, Power-SO8 package, enabling compact and efficient board design. The MOSFET requires a gate-source voltage of 10V to operate efficiently, and its gate threshold voltage is rated at 4V with a drain current of 1mA, while maintaining a gate-source voltage tolerance of ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.