BUK7M11-40HXN-Channel 40 V 35A (Tc) 50W (Tc) Surface Mount LFPAK33
1:$0.5560
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ABRmicro #.ABR2045-BUK7M1-987286
ManufacturerNexperia USA Inc.
MPN #.BUK7M11-40HX
Estimated Lead Time6 Weeks
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Datasheet
BUK7M11-40H(PDF)
BUK7M11-40H(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5560
Ext. Price$ 0.5560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5560$0.5560
10$0.4790$4.7920
100$0.3300$33.0440
500$0.2770$138.6560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK7M11
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1022 pF @ 25 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation50W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance11mOhm @ 10A, 10V
Package Type (Mfr.)LFPAK33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+20V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.6V @ 1mA
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7M11-40HX from Nexperia USA Inc. is a surface-mount N-channel MOSFET designed for high-efficiency power switching applications. It operates with a maximum voltage of 40 V and can handle a continuous current of 35A at the case temperature, with a maximum power dissipation of 50W. Encased in a compact LFPAK33 package, it features a low on-state resistance of 11mOhm at 10A with a gate voltage of 10V. The device requires a gate charge of 16 nC at 10 V, making it suitable for automotive-grade applications that demand robust performance and reliability.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.