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BUK7D25-40EXN-Channel 40 V 8A (Ta) 15W (Tc) Surface Mount DFN2020MD-6

1:$0.3330

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BUK7D2-949273
ManufacturerNexperia USA Inc.
MPN #.BUK7D25-40EX
Estimated Lead Time8 Weeks
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In Stock: 1640
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3330
Ext. Price$ 0.3330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3330$0.3330
10$0.2850$2.8480
100$0.1980$19.7630
500$0.1540$77.0310
1000$0.1250$125.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK7D25
Continuous Drain Current (ID) @ 25°C8A (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)460 pF @ 20 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation15W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance25mOhm @ 8A, 10V
Package Type (Mfr.)DFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case6-UDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUK7D25-40EX from Nexperia USA Inc. is an N-channel MOSFET designed for efficient power handling in compact applications. It supports a maximum voltage of 40V and can handle a current of 8A when appropriately mounted (Ta), with a power dissipation capacity of 15W when mounted on a case (Tc). The device is housed in a space-saving DFN2020MD-6 surface mount package, suitable for applications requiring high efficiency and compact design. It features a gate-source threshold voltage of 4V at 250µA and is capable of withstanding gate-source voltages of up to ±20V, with optimal performance achieved at a drive voltage of 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.